(China (Mainland))
Product Summary
The K4S561632E-TC75 is a 268,435,456 bits synchronous high data rate dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the K4S561632E-TC75 to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4S561632E-TC75 aboslute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss VDD, VDDQ: -1.0 ~ 4.6 V; (3)Storage temperature TSTG: -55 ~ +150 ℃; (4)Power dissipation PD: 1 W; (5)Short circuit current IOS: 50 mA.
Features
K4S561632E-TC75 features: (1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs; (5)All inputs are sampled at the positive going edge of the system clock.; (6)Burst read single-bit write operation; (7)DQM for masking; (8)Auto & self refresh; (9)64ms refresh period (8K Cycle).
Diagrams
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 K4S561632E-TC75 |
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K4S510432B |
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K4S510832B |
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K4S510832M |
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K4S511533F - Y(P)C |
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K4S511533F - Y(P)F |
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K4S511533F - Y(P)L |
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