(China (Mainland))
Product Summary
The m29W800dt-70n6 is an 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. The m29W800dt-70n6 can be performed using a single low voltage (2.7 to 3.6V) supply. The m29W800dt-70n6 is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
Parametrics
m29W800dt-70n6 absolute maximum ratings: (1) Temperature Under Bias TBIAS: -50 to 125°C; (2) Storage Temperature TSTG: -65 to 150°C; (3) Input or Output Voltage VIO: -0.6 to Vcc +0.6V; (4) Supply Voltage Vcc: -0.6 to 4V; (5) Identification Voltage VID: -0.6 to 13.5V.
Features
m29W800dt-70n6 features: (1) supply voltage: Vcc=2/7 to 3.6V for programm, erase and read; (2) access times: 45, 70, 90ns; (3) programming time: 10μs per byte /word typical; (4) 19 memory blocks; (5) program/erase controller; (6) unlock bypass program command; (7) common flash interface; (8) electronic signature.
Diagrams
| Image | Part No | Mfg | Description |  |
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 M29W800DT-70N6E |
Other |
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Data Sheet |
Negotiable |
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