K9F4008W0A-TCB0

K9F4008W0A-TCB0, TSOP, 512K x 8 bit, NAND Flash Memory, 3.0 to 5.5V

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Price:: US $1.80~2.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10 :	2.00 / Piece
20 ~ 50 :	1.80 / Piece

PartNumber:: K9F4008W0A-TCB0

Brand:: Samsung semiconductor - SAMSUNG | Pack: TSOP | D/C: 06+

Availability:: Supply Ability: 1/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-10

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Part Number:K9F4008W0A-TCB0
US $1.80 - 2.00
Quantity:

piece

Product Summary

The K9F4008W0A-TCB0 is a 512Kx8bit NAND Flash Memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recording. A Program operation programs a 32-byte frame in typical 500ms and an Erase operation erase a 4K-byte block in typical 6ms. Data in a frame can be read out at a burst cycle rate of 120ns/byte. The I/O pins serve as the ports for address and data input/output as well as for command inputs. The K9F4008W0A-TCB0 is an optimum solution for flash memory application that do not require the high performance levels or capacity of larger density flash memories. The applications of the K9F4008W0A-TCB0 include data storage in digital Telephone Answering Devices(TAD) and other consumer applications that require voice data storage.

Parametrics

K9F4008W0A-TCB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS: VIN: -0.6 to +7.0 V; (2)Temperature Under Bias: TBIAS: -10 to +125°C; (3)Storage Temperature: TSTG: -65 to +150 °C.

Features

K9F4008W0A-TCB0 features: (1)Voltage Supply: 3.0V~5.5V; (2)Organization: Memory Cell Array : 512K x 8 bit, Data Register: 32 x 8 bit; (3)Automatic Program and Erase (Typical): Frame Program: 32 Byte in 500ms, Block Erase: 4K Byte in 6ms; (4)32-Byte Frame Read Operation: Random Access: 15ms(Max.), Serial Frame Access: 120ns(Min.); (5)Command/Address/Data Multiplexed I/O port; (6)Low Operation Current (Typical): 10mA Standby Current, 10mA Read/ Program/Erase Current; (7)Reliable CMOS Floating-Gate Technology: Endurance : 100K Program/Erase Cycles; (8)Package: 44(40)- Lead TSOP Type II (400mil / 0.8 mm pitch).