ADG419BR

monolithic CMOS SPDT switch, SOP8, –0.3 V to VDD + 0.3 V, Low On Resistance, 30 mA

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PartNumber:: ADG419BR

Brand:: Analog Devices - ADI | Pack: SOP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-11-23

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Part Number:ADG419BR
US $1.00 - 10.00
A50L-0001-0175

US $100.00 - 100.00 / Piece
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LM285M-2.5

US $0.16 - 0.25 / Piece
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Product Summary

The ADG419BR is a monolithic CMOS SPDT switch. This switch is designed on an enhanced LC2 MOS process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. The applications of the device include Precision Test Equipment, Precision Instrumentation, Battery Powered Systems and Sample Hold Systems.

Parametrics

ADG419BR absolute maximum ratings: (1)VDD to VSS: +44 V; (2)VDD to GND: –0.3 V to +25 V; (3)VSS to GND: +0.3 V to –25 V; (4)VL to GND: –0.3 V to VDD + 0.3 V; (5)Analog, Digital Inputs: VSS – 2 V to VDD + 2 V or 30mA, Whichever Occurs First; (6)Continuous Current, S or D: 30 mA; (7)Peak Current, S or D:100 mA; (8)Operating Temperature Range: –40℃ to +85℃; (9)Storage Temperature Range: –65℃ to +150℃; (10)Junction Temperature: +150℃; (11)Cerdip Package, Power Dissipation: 600 mW; (12)θJA, Thermal Impedance: 110℃/W; (13)Lead Temperature, Soldering (10 sec): +300℃; (14)Plastic Package, Power Dissipation: 400 mW; (15)θJA, Thermal Impedance: 100℃/W; (16)Lead Temperature, Soldering (10 sec): +260℃; (17)SOIC Package, Power Dissipation: 400 mW; (18)θJA, Thermal Impedance: 155℃/W; (19)μSOIC Package, Power Dissipation: 315 mW; (20)θJA, Thermal Impedance: 205℃/W; (21)Lead Temperature, Soldering, Vapor Phase (60 sec): +215℃; Infrared (15 sec): +220℃.

Features

ADG419BR features: (1)44 V Supply Maximum Ratings; (2)VSS to VDD Analog Signal Range; (3)Low On Resistance (< 35 V); (4)Ultralow Power Dissipation (< 35 mW); (5)Fast Transition Time (160 ns max); (6)Break-Before-Make Switching Action; (7)Plug-In Replacement for DG419.