(China (Mainland))
Product Summary
The K4S281632E-TC75 is a 3.3V, 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the K4S281632E-TC75 to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4S281632E-TC75 absolute maximum ratings: (1)Voltage on any pin relative to Vss: VIN, VOUT: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss: VDD, VDDQ: -1.0 ~ 4.6 V; (3)Storage temperature: TSTG: -55 ~ +150 °C; (4)Power dissipation: PD: 1 W; (5)Short circuit current: IOS: 50 mA.
Features
K4S281632E-TC75 features: (1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs: CAS latency (2 & 3), Burst length (1, 2, 4, 8 & Full page), Burst type (Sequential & Interleave); (5)All inputs are sampled at the positive going edge of the system clock; (6)Burst read single-bit write operation; (7)DQM (x4,x8)& L(U)DQM (x16)for masking; (8)Auto & self refresh; (9)64ms refresh period (4K Cycle).
Diagrams
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 K4S281632E-TC75T00 |
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Negotiable |
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K4S280432A |
Other |
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Negotiable |
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K4S280432B |
Other |
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Negotiable |
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K4S280432C |
Other |
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Data Sheet |
Negotiable |
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K4S280432E-TC(L)75 |
Other |
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Data Sheet |
Negotiable |
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K4S280432F |
Other |
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Data Sheet |
Negotiable |
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K4S280432F-TC(L)75 |
Other |
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Data Sheet |
Negotiable |
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