(China (Mainland))
Product Summary
The K4E151612D-TL60 is a 1,048,576 x 16 bit extended data out CMOS DRAM. The K4E151612D-TL60 has CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. The K4E151612D-TL60 is fabricated using Samsung advanced CMOS process to realize high band-width, low power consumption and high reliability.
Parametrics
K4E151612D-TL60 absolute maximum ratings: (1) Voltage on any pin relative to VSS, VIN, VOUT: -1.0 to +7.0V; (2) Voltage on VCC supply relative to VSS Vcc: -1.0 to +7.0V; (3) Storage temperature Tstg: -55 to +150°C; (4) Power dissipation PD: 1W; (5) Short circuit output current ios address: 50mA.
Features
K4E151612D-TL60 features: (1) Extended data out mode operationl; (2) 2 CAS Byte/Word Read/Write operation; (3) CAS-before-RAS refresh capability; (4) RAS-only and hidden refresh capability; (5) Self-refresh capability (L-ver only) ; (6) Early write or output enable controlled write; (7) Available in plastic SOJ 400mil and TSOP(II) packages ; (8) Single +5V ±10% power supply (5V product).
Diagrams
