Product Summary

The K3S7V2000M is a synchronous high bandwidth mask programmable ROM. It is fabricated with SAMSUNG high performance CMOS process technology and is organized either as 4,194,304 x16bit(word mode) or as 2,097,152 x32bit(double word mode) depending on polarity of WORD pin. Synchronous design allows precise cycle control, with the use of system clock, I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Parametrics

K3S7V2000M absolute maximum ratings: (1)Voltage on VDD Relative to Vss: -0.5V to 4.6V; (2)Voltage on Any Pin Relative to Vss: -0.5V to VDD + 0.5≤4.6; (3)Operating Temperature: 0℃ to 70℃; (4)Storage Temperature: -55℃ to 125℃; (5)Short circuit current: 50mA; (6)Power Dissipation: 1W.

Features

K3S7V2000M features: (1)JEDEC standard 3.3V power supply ; (2)LVTTL compatible with multiplexed address; (3)Switchable organization: 4,194,304 x 16(word mode) /2,097,152 x 32(double word mode); (4)Default mode by user requirement; (5)MRS cycle with address key programs; (6)DQM for data-out masking; (7)Package: 86TSOP2-400.

Diagrams

K3S7V2000M pin connection

Image Part No Mfg Description Data Sheet Download Pricing
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K3S7V2000M-TC
K3S7V2000M-TC

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Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
K3S7V2000M-TC
K3S7V2000M-TC

Other


Data Sheet

Negotiable