Product Summary

The IRGBC40S is an Insulated Gate Bipolar Transistor. The IRGBC40S from International Rectifier has higher usable current densitie than comparable bipolar transistor, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC40S provides substantial benefits to a host of high-voltage, highcurrent applications.

Parametrics

IRGBC40S absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 600 V; (2)IC ＠ TC = 25℃ Continuous Collector Current: 50A; (3)IC ＠ TC = 100℃ Continuous Collector Current: 31 A; (4)ICM Pulsed Collector Current: 240A; (5)ILM Clamped Inductive Load Current: 100A; (6)VGE Gate-to-Emitter Voltage: ±20 V; (7)EARV Reverse Voltage Avalanche Energy: 15 mJ; (8)PD ＠ TC = 25℃ Maximum Power Dissipation: 160 W; (9)PD ＠ TC = 100℃ Maximum Power Dissipation: 65W; (10)TJ Operating Junction and: -55 to +150℃; (11)TSTG Storage Temperature Range -55 to +150℃.

Features

IRGBC40S features: (1)Switching-loss rating includes all tail losses; (2)Optimized for line frequency operation ( to 400 Hz).

Diagrams

IRGBC40S pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRGBC40S
IRGBC40S
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRGB10B60KD
IRGB10B60KD
Other

Data Sheet
Negotiable 
IRGB10B60KDPBF
IRGB10B60KDPBF
International Rectifier
IGBT Transistors 600V UltraFast 10-30kHz
Data Sheet
0-1: $2.44
1-25: $1.67
25-100: $1.24
100-250: $1.19
IRGB14C40L
IRGB14C40L

IGBT IGNITION 430V 20A TO-220AB
Data Sheet
0-200: $1.30
IRGB14C40LPBF
IRGB14C40LPBF
International Rectifier
IGBT Transistors
Data Sheet
0-1: $2.18
1-25: $1.49
25-100: $1.10
100-250: $1.06
IRGB15B60KD
IRGB15B60KD
Other

Data Sheet
Negotiable 
IRGB15B60KDPBF
IRGB15B60KDPBF
International Rectifier
IGBT Transistors 600V UltraFast 10-30kHz
Data Sheet
0-1: $2.92
1-25: $2.00
25-100: $1.49
100-250: $1.42