Product Summary

The IRFB31N20D is a HEXFET Power MOSFET.

Parametrics

IRFB31N20D absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 31A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 21A; (3)Pulsed Drain Current, IDM: 124A; (4)PD @TA = 25℃ Power Dissipation: 3.1W; (5)PD @TC = 25℃ Power Dissipation: 200W; (6)Linear Derating Factor: 1.3 W/℃; (7)Gate-to-Source Voltage, VGS: ±30 V; (8)Peak Diode Recovery dv/dt, dv/dt: 2.1 V/ns; (9)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 175℃; (10)Soldering Temperature, for 10 seconds 300 (1.6mm from case )℃; (11)Mounting torqe, 6-32 or M3 screw: 10 lbf·in (1.1N·m).

Features

IRFB31N20D features: (1)High Frequency DC-DC converters; (2)Lead-Free.

Diagrams

IRFB31N20D block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB31N20D
IRFB31N20D
International Rectifier
MOSFET N-CH 200V 31A TO-220AB
Data Sheet
1-150: $1.70
IRFB31N20DPBF
IRFB31N20DPBF
International Rectifier
MOSFET MOSFT 200V 31A 82mOhm 70nC
Data Sheet
0-1: $2.75
1-25: $1.88
25-100: $1.39
100-250: $1.33