(China (Mainland))
Product Summary
The Hynix HY57V281620HCT-H is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. The HY57V281620HCT-H is organized as 4banks of 2,097,152x16 HY57V281620HCT-H is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Parametrics
HY57V281620HCT-H absolute maximum ratings: (1)Ambient Temperature: TA: -40 ~ 85 °C; (2)Storage Temperature: TSTG: -55 ~ 125 °C; (3)Voltage on Any Pin relative to VSS: VIN, VOUT: -1.0 ~ 4.6 V; (4)Voltage on VDD relative to VSS: VDD, VDDQ: -1.0 ~ 4.6 V; (5)Short Circuit Output Current: IOS: 50 mA; (6)Power Dissipation: PD: 1 W; (7)Soldering Temperature. Time: TSOLDER: 260. 10 °C. Sec.
Features
HY57V281620HCT-H features: (1)Single 3.3±0.3V power supply; (2)All device pins are compatible with LVTTL interface; (3)JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch; (4)All inputs and outputs referenced to positive edge of system clock; (5)Data mask function by UDQM or LDQM; (6)Internal four banks operation; (7)Auto refresh and self refresh; (8)4096 refresh cycles / 64ms; (9)Programmable Burst Length and Burst Type: 1, 2, 4, 8 or Full page for Sequential Burst, 1, 2, 4 or 8 for Interleave Burst; (10)Programmable CAS Latency; 2, 3 Clocks.
Diagrams
