(China (Mainland))
Product Summary
The FQP9N50C is an N-Channel MOSFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
FQP9N50C absolute maximum ratings: (1)Drain-Source Voltage: 500 V; (2)Drain Current : 9 A; (3)Drain Current - Pulsed : 36 A; (4)Gate-Source Voltage : ± 30 V; (5)Single Pulsed Avalanche Energy (Note 2) : 360 mJ; (6)Avalanche Current (Note 1) : 9 A; (7)Repetitive Avalanche Energy (Note 1) : 13.5 mJ; (8)Peak Diode Recovery dv/dt (Note 3) : 4.5 V/ns; (9)Power Dissipation : 135 W; (10)Operating and Storage Temperature Range : -55 to +150 ℃.
Features
FQP9N50C features: (1)9 A, 500V, RDS(on) = 0.8 Ω@VGS = 10 V; (2)Low gate charge ( typical 28 nC); (3)Low Crss ( typical 24 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FQP9N50C |
Fairchild Semiconductor |
MOSFET 500V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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 |
FQP9N50C_F080 |
Fairchild Semiconductor |
MOSFET N-CH/500V/9A QFET C-SERIES |
Data Sheet |
Negotiable |
|
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|
FQP9N50C_Q |
Fairchild Semiconductor |
MOSFET 500V N-Ch QFET Advane C-Series |
Data Sheet |
Negotiable |
|
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