Product Summary

The FQA13N50CF is a 500V N-channel MOSFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild proprietary, planar stripe, DMOS technology. The FQA13N50CF advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA13N50CF well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQA13N50CF absolute maximum ratings: (1)Drain-source voltage: 500 V; (2)Drain current - continuous (TC = 25°C): 15 A; Continuous (TC = 100°C): 9.5 A; (3)Drain current - pulsed (Note 1): 60 A; (4)Gate-source voltage: ± 30 V; (5)Single pulsed avalanche energy (Note 2): 860 mJ; (6)Avalanche current (Note 1): 15 A; (7)Repetitive avalanche energy (Note 1): 21.8 mJ; (8)Peak diode recovery dv/dt (Note 3): 4.5 V/ns; (9)Power dissipation (TC = 25°C): 218 W; Derate above 25°C: 1.56 W/°C; (10)Operating and storage temperature range: -55 to +150 °C; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 °C.

Features

FQA13N50CF features: (1)15A, 500V, RDS(on)= 0.48Ω @VGS = 10 V; (2)Low gate charge (typical 43 nC); (3)Low Crss (typical 20pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)Fast recovery body diode (typical 100ns).

Diagrams

FQA13N50CF pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQA13N50CF
FQA13N50CF
Fairchild Semiconductor
MOSFET 500V N-Ch C-FET (FRFET)
Data Sheet
0-1: $1.26
1-25: $1.12
25-100: $1.01
100-250: $0.90
FQA13N50CF_F109
FQA13N50CF_F109
Fairchild Semiconductor
MOSFET 500V N-Ch C-FET
Data Sheet
Negotiable