Product Summary

The BC638 is a high current transistor.

Parametrics

BC638 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: –60 Vdc; (2)Collector–Base Voltage VCBO: –60 Vdc; (3)Emitter–Base Voltage VEBO: –5.0 Vdc; (4)Collector Current — Continuous IC: –0.5 Adc; (5)Total Device Dissipation @ TA = 25°C: 625 mW; (6)Derate above 25°C: 12 mW/°C; (7)Total Device Dissipation @ TC = 25°C: 1.5 Watt; (8)Derate above 25°C: 12 mW/°C; (9)Operating and Storage Junction Temperature Range TJ, Tstg: –55 to +150 °C.

Diagrams

BC638 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
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BC638
BC638

Fairchild Semiconductor

Transistors Bipolar (BJT) TO-92 PNP GP AMP

Data Sheet

Negotiable 
BC638 T/R
BC638 T/R

NXP Semiconductors

Transistors Bipolar (BJT) TRANS GP TAPE RADIAL

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BC638,112
BC638,112


TRANSISTOR PNP 60V 1A TO-92

Data Sheet

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BC638,116
BC638,116


TRANSISTOR PNP 60V 1A TO-92

Data Sheet

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BC638,126
BC638,126


TRANSISTOR PNP 60V 1A TO-92

Data Sheet

Negotiable 
BC638_Q
BC638_Q

Fairchild Semiconductor

Transistors Bipolar (BJT) TO-92 PNP GP AMP

Data Sheet

Negotiable 
BC638-10
BC638-10

Other


Data Sheet

Negotiable 
BC638-16
BC638-16

Other


Data Sheet

Negotiable