(China (Mainland))
Product Summary
The BC638 is a high current transistor.
Parametrics
BC638 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: –60 Vdc; (2)Collector–Base Voltage VCBO: –60 Vdc; (3)Emitter–Base Voltage VEBO: –5.0 Vdc; (4)Collector Current — Continuous IC: –0.5 Adc; (5)Total Device Dissipation @ TA = 25°C: 625 mW; (6)Derate above 25°C: 12 mW/°C; (7)Total Device Dissipation @ TC = 25°C: 1.5 Watt; (8)Derate above 25°C: 12 mW/°C; (9)Operating and Storage Junction Temperature Range TJ, Tstg: –55 to +150 °C.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BC638 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) TO-92 PNP GP AMP |
Data Sheet |
Negotiable |
|
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 |
BC638,112 |
|
TRANSISTOR PNP 60V 1A TO-92 |
Data Sheet |
Negotiable |
|
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|
BC638_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) TO-92 PNP GP AMP |
Data Sheet |
Negotiable |
|
||||
 |
BC638-10 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BC638-16 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BC638-6 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BC638TF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Si Transistor Epitaxial |
Data Sheet |
Negotiable |
|
||||
 |
BC638ZL1G |
ON Semiconductor |
Transistors Bipolar (BJT) 500mA 60V PNP |
Data Sheet |
Negotiable |
|
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