(China (Mainland))
Product Summary
The AM29LV1600B-70EC is a 16 Mbit, 3.0 Volt-only flash memory organized as 2,097,152 bytes or 1,048,576 words. The AM29LV1600B-70EC is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The AM29LV1600B-70EC is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers. The AM29LV1600B-70EC offers access times of 70, 80, 90, and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.
Parametrics
AM29LV1600B-70EC absolute maximum ratings: (1)Storage temperature plastic packages: –65°C to +150°C; (2)Ambient temperature with power applied: –65°C to +125°C; (3)Voltage with respect to ground VCC (Note 1): –0.5 V to +4.0 V; A9, OE#, and RESET# (Note 2): –0.5 V to +12.5 V; All other pins (Note 1): –0.5 V to VCC+0.5 V; (4)Output short circuit current (Note 3): 200 mA.
Features
AM29LV1600B-70EC features: (1)Single power supply operation: Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications; Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors; (2)Manufactured o0.32 μm process technology; (3)High performance: Full voltage range: access times as fast as 80 ns; Regulated voltage range: access times as fast as 70 ns; (4)Ultra low power consumptio(typical values at 5 MHz): 200 nA automatic sleep mode current; 200 nA standby mode current; 9 mA read current; 20 mA program/erase current.
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