(China (Mainland))
Product Summary
The 81F641642D-102FN is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 32-bit format. The MB81F643242B features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F643242B SDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a conventional DRAM.
Parametrics
81F641642D-102FN absolute maximum ratings: (1)Voltage of VCC Supply Relative to VSS VCC, VCCQ: –0.5 to +4.6 V; (2)Voltage at Any Pin Relative to VSS VIN, VOUT: –0.5 to +4.6 V; (3)Short Circuit Output Current IOUT: ±50 mA; (4)Power Dissipation PD: 1.3 W; (5)Storage Temperature TSTG: –55 to +125 °C.
Features
81F641642D-102FN features: (1)Single +3.3 V Supply ±0.3 V tolerance; (2)LVTTL compatible I/O interface; (3)4 K refresh cycles every 16 ms; (4)Four bank operation; (5)Burst read/write operation and burst read/single write operation capability; (6)Programmable burst type, burst length, and CAS latency; (7)Auto-refresh (every 3.9 µs); (8)CKE power down mode; (9)Output Enable and Input Data Mask.
Diagrams
