(China (Mainland))
Product Summary
The W986416EH-7 is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. The W986416EH-7 delivers a data bandwidth of up to 200M words per second. For different application, the device is sorted into the following speed grades: -5, -6, -7/-7S. The -5 parts can run up to 200MHz/CL3. The -6 parts can run up to 166MHz/CL3. The -7/-7S parts can run up to 143MHz/CL3. And the grade of -7S with tRP = 18nS.
Parametrics
W986416EH-7 absolute maximum ratings: (1)Input, Column Output Voltage, VIN, VOUT: -0.3 ~ VDD+ 0.3V; (2)Power Supply Voltage, VDD, VDDQ: -0.3 ~ 4.6 V; (3)Operating Temperature, TOPR: 0 ~ 70℃; (4)Storage Temperature, TSTG: -55 ~ 150℃; (5)Soldering Temperature (10s), TSOLDER: 260℃; (6)Power Dissipation, PD: 1 W; (7)Short Circuit Output Current, IOUT: 50 mA.
Features
W986416EH-7 features: (1)2.7 to 3.6V power supply; (2)1048576 words * 4 banks * 16bits organization; (3)self refresh current: standby and low power; (4)CAS latency: 2 and 3; (5)burst lenght: 1.2.4.8 and full page; (6)sequential and interleave burst; (7)burst read, single write operation; (8)byte data controlled by DQM; (9)power-down mode; (10)auto-precharge and controlled precharge.
Diagrams
