(China (Mainland))
Product Summary
The W29C040T-90B is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K X 8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C040T-90B results in fast write (erase/program) operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The W29C040T-90B can also be written (erased and programmed) by using standard EPROM programmers.
Parametrics
W29C040T-90B absolute maximum ratings: (1)Power supply voltage to Vss potential: -0.5V to +7.0V; (2)Operating temperature: 0℃ to +70℃; (3)Storage temperature: -65℃ to +150℃; (4)D.C. voltage on any pin to ground potential except A9: -0.5V to VDD +1.0V; (5)Transient voltage (<20 nS ) on any pin to ground potential: -1.0V to VDD +1.0V; (6)Voltage on A9 and OE Pin to ground potential: -0.5V to 12.5V.
Features
W29C040T-90B features: (1)Single 5-volt write (erase and program) operations; (2)Fast page-write operations: 256 bytes per page, Page write (erase/program) cycle: 5 mS (typ.), Effective byte-write (erase/program) cycle time: 19.5 mS, Optional software-protected data write; (3)Fast chip-erase operation: 50 mS; (4)Two 16 KB boot blocks with lockout; (5)Typical page write (erase/program) cycles: 1K/10K (typ.); (6)Read access time: 90/120 nS; (7)Ten-year data retention; (8)Software and hardware data protection; (9)Low power consumption: Active current: 25 mA (typ.), Standby current: 20 mA (typ.); (10)Automatic write (erase/program) timing with internal VPP generation; (11)End of write (erase/program) detection: Toggle bit, Data polling; (12)Latched address and data; (13)All inputs and outputs directly TTL compatible; (14)JEDEC standard byte-wide pinouts; (15)Available packages: TSOP and PLCC.
Diagrams
