Product Summary

The v53c16258lt50 is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The v53c16258lt50 offers Page mode with Extended Data Output. The v53c16258lt50 has symmetric address and accepts 512 cycle 8ms interval. EDO Page Mode operation of the v53c16258lt50 allows random access up to 512 x 16 bits, within a page, with cycle times as short as 15ns. The v53c16258lt50 is ideally suited for a wide variety of high performance portable computer systems and peripheral applications.

Parametrics

v53c16258lt50 absolute maximum ratings: (1) Ambient Temperature Under Bias: -10 to +80°C; (2) Storage Temperature (plastic) : -55 t0 +125°C; (3) Voltage Relative to VSS: -1 to +4.6V; (4) Data Output Current: 50mA; (5) Power Dissipation: 1.0W.

Features

v53c16258lt50 features: (1) 256K x 16-bit organization; (2) EDO Page Mode for a sustained data rate of 71 MHz; (3) access time: 35, 40, 45, 50 ns and RAS; (4) Dual CAS Inputs; (5) Low power dissipation; (6) Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh, and Self Refresh; (7) Optional Self Refresh (V53C16258SL) ; (8) Refresh Interval: Standard: 512 cycles/8ms; (9) Available in 40-pin 400 mil SOJ and 40/44L-pin 400 mil TSOP-II packages; (10) Single +3.3V ± 0.3V Power Supply; (11) TTL Interface.

Diagrams

v53c16258lt50 pin configuration