Product Summary

The v53c16258ht35 is a high speed 262,144 x 16 bit high-performance CMOS dynamic random access memory. The v53c16258ht35 offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. Mode operation of the v53c16258ht35 for higher sustained bandwidth with Page Mode cycle times as short as 10ns. Input and output capicatance of the v53c16258ht35 is significantly lowered to increase performance and minimize loading. These features make the v53c16258ht35 ideally suited for a wide variety of high performance computer systems and peripheral applications.

Parametrics

v53c16258ht35 absolute maximum ratings: (1) Ambient Temperature Under Bias: -10 to +80°C; (2) Storage Temperature (plastic) : -55 to +125°C; (3) Voltage Relative to VSS: -1 to +7V; (4) Data Output Current: 50mA; (5) Power Dissipation: 1.0W.

Features

v53c16258ht35 features: (1) 256K x 16-bit organization; (2) EDO Page Mode for a sustained data rate of 100 MHz; (3) access time: 35, 40, 45, 50 ns and RAS; (4) Dual CAS Inputs; (5) Low power dissipation; (6) Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh, and Self Refresh; (7) Optional Self Refresh (V53C16258SL) ; (8) Refresh Interval: Standard: 512 cycles/8ms; (9) Available in 40-pin 400 mil SOJ and 40/44L-pin 400 mil TSOP-II packages; (10) Single +5V ±10% Power Supply; (11) TTL Interface.

Diagrams

v53c16258ht35 Block Diagram