Product Summary

The TLP632 is a GaAs IRED & photo-transistor. It consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. The TLP632 is no-base internal connection for high-EMI environments.

Parametrics

TLP632 absolute maximum ratings: (1)storage temperature range: -55 to 125°C; (2)operating temperture range: -55 to 100°C; (3)lead soldering temperature(10s): 260°C; (4)total package power dissipation: 250mW; (5)isolation voltage: 5000Vrms; (6)forward current: 60mA; (7)collector emitter voltage: 55V; (8)emitter collector voltage: 7V.

Features

TLP632 features: (1)collector-emitter voltage: 55V; (2)current transfer ratio: 50%(min.), Rank GB: 100%(min.); (3)isolation voltage: 5000Vrms; (4)UL recognized: UL1577, file No.E67349.

Diagrams

TLP632 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TLP632
TLP632

PHOTOCPLR AD/DC IN TRANSOUT 6DIP
Data Sheet
Negotiable 
TLP632(F)
TLP632(F)
Toshiba
Transistor Output Optocouplers PHOTOCOUPLER
Data Sheet
0-1: $0.53
1-10: $0.43
10-100: $0.37
100-250: $0.32
TLP632(GB,F)
TLP632(GB,F)

PHOTOCPLR AD/DC IN TRANSOUT 6DIP
Data Sheet
0-1: $0.74
1-10: $0.66
10-25: $0.60
25-100: $0.52
100-250: $0.46
250-500: $0.40
500-1000: $0.32
1000-2500: $0.30
2500-5000: $0.28
TLP632.
TLP632.
Other

Data Sheet
Negotiable