Product Summary

The tlp521 is a GaAs IRED and photo-transistor. The tlp521 consists of a photo-transistor optically coupled to a gallium arsenide infraded emitting diode.

Parametrics

tlp521 absolute maximum ratings: (1) forward current IF: 70mA; (2) Forward current debrating: -0.93 mA/°C (Ta≥50°C) ; (3) Pulse forward current, IFP: 1A (100μ pulse, 100pps) ; (4) Reverse voltage VR: 5V; (5) Junction Temperature Tj: 125°C: (6) Collector-emitter voltage VCEO: 55V; (7) Emitter-Collector Voltage VECO: 7V; (8) Operating temperature range Tstg: -55 to 125°C; (9) Operating temperature range Topr: -55 to 100°C; (10) Junction temperature: 125°C.

Features

tlp521 features: (1) collector-emitter voltage: 55V (min) ; (2) current transfer ratio: 50% (min); (3) Isolation voltage: 2500Vrms (min) ; (4) UL recognized.

Diagrams

tlp521 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TLP521
TLP521

Other


Data Sheet

Negotiable 
TLP521−1
TLP521−1

Other


Data Sheet

Negotiable 
TLP521−2
TLP521−2

Other


Data Sheet

Negotiable 
TLP521−4
TLP521−4

Other


Data Sheet

Negotiable 
TLP521-1
TLP521-1

Other


Data Sheet

Negotiable 
TLP521-1(Y,F,T)
TLP521-1(Y,F,T)

Toshiba

Transistor Output Optocouplers PCOUPLER GaAs Ired x

Data Sheet

Negotiable 
TLP521-1-4
TLP521-1-4

Other


Data Sheet

Negotiable 
TLP521-1GB
TLP521-1GB

Other


Data Sheet

Negotiable