Product Summary
The TIP3055 is a complementary silicon power transistor designed for general-purpose switching and amplifier applications.
Parametrics
TIP3055 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 60 Vdc; (2)Collector–Emitter Voltage, VCER: 70 Vdc; (3)Collector–Base Voltage, VCB: 100 Vdc; (4)Emitter–Base Voltage, VEB: 7.0 Vdc; (5)Collector Current — Continuous, IC: 1 5 Adc; (6)Base Current, IB: 7.0 Adc; (7)Total Power Dissipation, PD: 90Watts; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: –65 to +150℃.
Features
TIP3055 features: (1)DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc; (2)Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc; (3)Excellent Safe Operating Area.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TIP3055 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Power Darlington |
Data Sheet |
|
|
|||||||||||||
TIP3055G |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 80W NPN |
Data Sheet |
|
|
|||||||||||||
TIP3055-S |
Bourns |
Transistors Bipolar (BJT) 60V 15A NPN |
Data Sheet |
Negotiable |
|