(China (Mainland))
Product Summary
The TC58DVM82A1FT00 is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory. It is organized as 528 bytes/264 words×32 pages×2048 blocks. The device uses dual power supplies (2.7V to 3.6V for VCC and 1.65V to 1.95V for VCCQ ). The device has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes×32 pages/8k words + 256 words:264 words×32 pages).
Parametrics
TC58DVM82A1FT00 absolute maximum ratings: (1)Power Supply Voltage: -0.6V to 4.6V ; (2)I/O port Power Supply Voltage: -0.6V to 2.6V; (3)Input Voltage for Control pins: -0.6V to 2.6V; (4)Input/Output Voltage for I/O pins:-0.6V to VCCQ +0.3 V (≦ 2.6 V); (5)Power Dissipation:0.3W; (6)Soldering Temperature(10s): 260℃; (7)Storage Temperature:-55℃ to 150℃; (8)Operating Temperature:0℃ to 70℃.
Features
TC58DVM82A1FT00 features: (1)Organization: Memory cell allay 528×64K×8, Register 528×8, Page size 528 bytes, Block size (16K+512) bytes; (2)Modes: Read, Reset, Auto Page Program Auto Block Erase, Status Read; (3)Mode control: Serial input/output; (4)Program/Erase Cycles 1E5 cycle (with ECC); (5)Package: TSOP I 48-P-1220-0.50 (Weight:0.53g typ).
Diagrams
