(China (Mainland))
Product Summary
The STE53NC50 is a PowerMESH II MOSFET which is the evolution of the first generation of MESH OVERLAY The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. Applications include high current, high speed switching, swith mode power supplies (smps), dc-ac converters for welding, equipment and uninterruptible and power supplies and motor driver.
Parametrics
STE53NC50 absolute maximum ratings: (1)Drain-source Voltage (VGS = 0): 500 V; (2)Drain-gate Voltage (RGS = 20 k?): 500 V; (3)Gate- source Voltage: ±30 V; (4)Drain Current (continuos) at TC = 25℃: 53 A; (5)Drain Current (continuos) at TC = 100℃: 33 A; (6)Drain Current (pulsed): 212 A; (7)Total Dissipation at TC = 25℃: 460 W; (8)Derating Factor: 3.68 W/℃; (9)Peak Diode Recovery voltage slope: 3 V/ns; (10)Insulation Winthstand Voltage (AC-RMS): 2500 V; (11)Storage Temperature: -65 to 150℃; (12)Max. Operating Junction Temperature: 150℃.
Features
STE53NC50 features: (1)extremely high dv/dt capability; (2)100% avalanche tested; (3)new high voltage benchmark; (4)gate charge minimized.
Diagrams
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 STE53NC50 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 53 Amp |
Data Sheet |
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STE50DE100 |
STMicroelectronics |
Transistors Bipolar (BJT) POWER MOSFET |
Data Sheet |
Negotiable |
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STE53NA50 |
Other |
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Data Sheet |
Negotiable |
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STE53NC50 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 53 Amp |
Data Sheet |
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