Product Summary

The S29GL512N11TFI02 is a Flash memory. The device has an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Parametrics

S29GL512N11TFI02 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: -65℃ to +150℃; (2)Ambient Temperature with Power Applied: -65℃ to +125℃; (3)Voltage with Respect to Ground: VCC (Note 1): -0.5V to +4.0V, A9, OE#, ACC and RESET#(NOTE2): -0.5V to +12.5V, All other pins(Note 1): -0.5V to VCC+0.5V; (4)Output Short Circuit Current (Note 3): 200mA.

Features

S29GL512N11TFI02 features: (1)Single power supply operation; (2)Manufactured on 200 nm MirrorBit process technology; (3)100,000 erase cycles typical per sector; (4)20-year data retention typical; (5)Program Suspend & Resume: read other sectors before programming operation is completed; (6)Sector Group Protection: hardware-level method of preventing write operations within a sector group.

Diagrams

S29GL512N11TFI02 block diagram