S29GL01GP12TFI01

S29GL01GP12TFI01, Flash memory, 200mA, -0.5V to +4.0V, TSOP

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Price:: US $1.80~2.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10 :	2.00 / Piece
20 ~ 100 :	1.80 / Piece

PartNumber:: S29GL01GP12TFI01

Brand:: SPANSION - spansion | Pack: TSOP | D/C: 08+

Availability:: Supply Ability: 1/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-29

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Part Number:S29GL01GP12TFI01
US $1.80 - 2.00
Quantity:

piece

Product Summary

The S29GL01GP12TFI01 is a Flash memory. The device offers a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. It feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Parametrics

S29GL01GP12TFI01 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: -65℃ to +150℃; (2)Ambient Temperature with Power Applied: -65℃ to +125℃; (3)Voltage with Respect to Ground: VCC (Note 1): -0.5V to +4.0V, VIO: -0.5V to +4.0V, A9 and ACC(Note 2): -0.5V to +12.5V, All Inputs and I/Os except as noted below: -0.5V to VCC+0.5V; (4)Output Short Circuit Current (Note 3): 200mA.

Features

S29GL01GP12TFI01 features: (1)Single 3V read/program/erase (2.7-3.6V); (2)90 nm MirrorBit process technology; (3)8-word/16-byte page read buffer; (4)32-word/64-byte write buffer reduces overall programming; (5)time for multiple-word updates; (6)Secured Silicon Sector region; (7)Suspend and Resume commands for Program and Erase operations; (8)Write operation status bits indicate program and erase operation completion; (9)Unlock Bypass Program command to reduce programming time.