Product Summary
The S2000N is a TOSHIBA transistor. It is a silicon npn triple diffused mesa type. The S2000N is designed for color tv horizontal output applications and color tv switching regulator applications.
Parametrics
S2000N absolute maximum ratings: (1)Collector.Emitter Voltage VCES: 1500 V; (2)Emitter.Base Voltage VEBO: 5 V; (3)Collector Current DC IC: 8 A, Pulse ICP: 15 A; (4)Base Current IB: 4 A; (5)Collector Power Dissipation PC: 50 W; (6)Junction Temperature Tj: 150 ℃; (7)Storage Temperature Range Tstg: -55~150 ℃; (8)Thermal Resistance Rth (j.c): 2.5 ℃ / W.
Features
S2000N features: (1)High Voltage: VCES = 1500 V; (2)High Speed: tf = 0.7μs (Max.); (3)Low Saturation Voltage: VCE (sat) = 5 V (Max.); (4)Collector Metal (Fin) is Fully Covered with Mold Resin.
Diagrams
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![]() S2000N |
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![]() S200 |
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![]() POCKET SOLDER LEAD-FREE SAC 305 |
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![]() S2000 |
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![]() S2000A |
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![]() S2000A1 |
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![]() S2000AF |
![]() STMicroelectronics |
![]() Transistors Switching (Resistor Biased) HI VLT NPN PWR TRANS STANDARD DEF |
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![]() Negotiable |
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![]() S2000AFI |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw |
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![]() Negotiable |
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