Product Summary
The PHT2508CF is a thyristor module.
Parametrics
PHT2508CF absolute maximum ratings: (1)Repetitive Peak Off-State Voltage VDRM: 800V; (2)Non Repetitive Peak Off-State Voltage VDSM: 900 V; (3)Repetitive Peak Reverse Voltage VRRM: 800V; (4)Non Repetitive Peak Reverse Voltage VRSM: 900 V; (5)Average Rectified Output Current IO(AV)50Hz Half Sine Wave condition Tc=65℃: 250 A; (6)RMS On-State Current IT(RMS): 390 A; (7)Surge On-State Current ITSM 50 Hz Half Sine Wave, 1Pulse Non-Repetitive: 4000 A; (8)I Squared t I2t 2msec to 10msec: 80000 A2s; (9)Critical Rate of Turned-On Current di/dt VD=2/3VDRM, ITM=2•IO, Tj=125℃ IG=300mA, diG/dt=0.2A/μs: 100 A/μs; (10)Peak Gate Power PGM: 5 W; (11)Average Gate Power PG(AV): 1 W; (12)Peak Gate Current IGM: 2 A; (13)Peak Gate Voltage VGM: 10 V; (14)Peak Gate Reverse Voltage VRGM: 5 V; (15)Operating JunctionTemperature Range Tjw: -40 to +125 ℃; (16)Storage Temperature Range Tstg: -40 to +125 ℃; (17)Isoration Voltage Viso Base Plate to Terminals, AC1min: 2000 V.
Features
PHT2508CF features: (1)Isolated Base; (2)Single Thyristor Module; (3)High Surge Capability; (4)UL Recognized, File No. E187184.
Diagrams
PHT2010E10R0DG |
Vishay/Sfernice |
Thin Film Resistors - SMD PHT 2010 E 10R0 D G WP e4 |
Data Sheet |
Negotiable |
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PHT2010E10R0DGT |
Vishay/Sfernice |
Thin Film Resistors - SMD 100mWatt 10ohms 0.5% 30ppm |
Data Sheet |
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PHT2010E10R0DGT200 |
RES 10 OHM 100MW 0.5% 2010 |
Data Sheet |
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PHT2010H18R0FG |
Vishay |
Thin Film Resistors - SMD |
Data Sheet |
Negotiable |
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PHT2010H8250FG |
Vishay |
Thin Film Resistors - SMD PHT 2010 H 8250 F G WP e4 |
Data Sheet |
Negotiable |
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PHT2010H8250FGT |
Vishay |
Thin Film Resistors - SMD |
Data Sheet |
Negotiable |
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