Product Summary

The PHT2508CF is a thyristor module.



Parametrics

PHT2508CF absolute maximum ratings: (1)Repetitive Peak Off-State Voltage VDRM: 800V; (2)Non Repetitive Peak Off-State Voltage VDSM: 900 V; (3)Repetitive Peak Reverse Voltage VRRM: 800V; (4)Non Repetitive Peak Reverse Voltage VRSM: 900 V; (5)Average Rectified Output Current IO(AV)50Hz Half Sine Wave condition Tc=65℃: 250 A; (6)RMS On-State Current IT(RMS): 390 A; (7)Surge On-State Current ITSM 50 Hz Half Sine Wave, 1Pulse Non-Repetitive: 4000 A; (8)I Squared t I2t 2msec to 10msec: 80000 A2s; (9)Critical Rate of Turned-On Current di/dt VD=2/3VDRM, ITM=2•IO, Tj=125℃ IG=300mA, diG/dt=0.2A/μs: 100 A/μs; (10)Peak Gate Power PGM: 5 W; (11)Average Gate Power PG(AV): 1 W; (12)Peak Gate Current IGM: 2 A; (13)Peak Gate Voltage VGM: 10 V; (14)Peak Gate Reverse Voltage VRGM: 5 V; (15)Operating JunctionTemperature Range Tjw: -40 to +125 ℃; (16)Storage Temperature Range Tstg: -40 to +125 ℃; (17)Isoration Voltage Viso Base Plate to Terminals, AC1min: 2000 V.

Features

PHT2508CF features: (1)Isolated Base; (2)Single Thyristor Module; (3)High Surge Capability; (4)UL Recognized, File No. E187184.

Diagrams

PHT2508CF pin connection

PHT2010Y1002BGT
PHT2010Y1002BGT

Vishay/Sfernice

Thin Film Resistors - SMD 100mWatt 10Kohms 0.01% 15ppm

Data Sheet

0-1: $9.26
1-10: $8.33
10-25: $7.31
25-50: $6.29
50-100: $5.27
PHT2NQ10T,135
PHT2NQ10T,135


MOSFET N-CH 100V 2.5A SOT223

Data Sheet

Negotiable 
PHT2NQ10T
PHT2NQ10T

Other


Data Sheet

Negotiable 
PHT2508
PHT2508

Other


Data Sheet

Negotiable 
PHT25012
PHT25012

Other


Data Sheet

Negotiable 
PHT2010Y3004BGT200
PHT2010Y3004BGT200


RES 3.0M OHM 100MW 0.1% 2010

Data Sheet

0-1: $7.72
1-10: $7.05
10-25: $6.38
25-50: $6.25
50-100: $5.98