(China (Mainland))
Product Summary
The MT48LC4M16A2TG-8EC is a Micron 64Mb SDRAM. The MT48LC4M16A2TG-8EC is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. The MT48LC4M16A2TG-8EC is internally configured as a quadbank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4s 16,777,216-bit banks is organized as 4,096 rows by 1,024 columns by 4 bits. Each of the x8s 16,777,216-bit banks is organized as 4,096 rows by 512 columns by 8 bits. Each of the x16s 16,777,216- bit banks is organized as 4,096 rows by 256 columns by 16 bits.
Parametrics
MT48LC4M16A2TG-8EC absolute maximum ratings: (1)Voltage on VDD, VDDQ Supply Relative to VSS: -1V to +4.6V; (2)Voltage on Inputs, NC or I/O Pins Relative to VSS: -1V to +4.6V; (3)Operating Temperature, TA (commercial): 0°C to +70°C; (4)Operating Temperature, TA (extended; IT parts): -40°C to +85°C; (5)Storage Temperature (plastic): -55°C to +150°C; (6)Power Dissipation: 1W.
Features
MT48LC4M16A2TG-8EC features: (1)PC66-, PC100-, and PC133-compliant; (2)Fully synchronous; all signals registered on positive edge of system clock; (3)Internal pipelined operation; column address can be changed every clock cycle; (4)Internal banks for hiding row access/precharge; (5)Programmable burst lengths: 1, 2, 4, 8, or full page; (6)Auto Precharge, includes concurrent auto precharge, and Auto Refresh Modes; (7)Self Refresh Modes: standard and low power; (8)64ms, 4,096-cycle refresh; (9)LVTTL-compatible inputs and outputs; (10)Single +3.3V ±0.3V power supply.
Diagrams
