Product Summary

The MIG30J103H is a silicon N channel IGBT. The applications of the MIG30J103H include high power switching and motor control.

Parametrics

MIG30J103H absolute maximum ratings: (1)Supply Voltage : 400 V; (2)Collector-Emitter Voltage : 600 V; (3)Collector Current (DC) : 30 A; (4)Collector Power Dissipation : 83 W; (5)Junction Temperature : 150 ℃; (6)Supply Voltage : 20 V; (7)Control Part VIN Input Voltage : 20 V; (8)Foul Output Voltage : 20 V; (9)Foul Output Current : 7 mA; (10)Operating Temperature : -20 to +100 ℃; (11)Storage Temperature Range : -40 to +125 ℃.

Features

MIG30J103H features: (1)Intelligent Power Module that include IGBT drive circuits, overcurrent, under voltage lockout, and over temperature protection; (2)The Electrodes are Isolated from Case; (3)Outline: TOSHIBA 2-99E1A (See page 5 for the device outline); (4)Weight: 80g.

Diagrams

MIG30J103H dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MIG30J103H
MIG30J103H

Other


Data Sheet

Negotiable 
MIG30J103HB
MIG30J103HB

Other


Data Sheet

Negotiable