(China (Mainland))
Product Summary
The MIG30J103H is a silicon N channel IGBT. The applications of the MIG30J103H include high power switching and motor control.
Parametrics
MIG30J103H absolute maximum ratings: (1)Supply Voltage : 400 V; (2)Collector-Emitter Voltage : 600 V; (3)Collector Current (DC) : 30 A; (4)Collector Power Dissipation : 83 W; (5)Junction Temperature : 150 ℃; (6)Supply Voltage : 20 V; (7)Control Part VIN Input Voltage : 20 V; (8)Foul Output Voltage : 20 V; (9)Foul Output Current : 7 mA; (10)Operating Temperature : -20 to +100 ℃; (11)Storage Temperature Range : -40 to +125 ℃.
Features
MIG30J103H features: (1)Intelligent Power Module that include IGBT drive circuits, overcurrent, under voltage lockout, and over temperature protection; (2)The Electrodes are Isolated from Case; (3)Outline: TOSHIBA 2-99E1A (See page 5 for the device outline); (4)Weight: 80g.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MIG30J103H |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MIG30J103HB |
Other |
|
Data Sheet |
Negotiable |
|
||||
