(China (Mainland))
Product Summary
The M29W640FB-70N6 is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks that can be erased independently so the M29W640FB-70N6 is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory.
Parametrics
M29W640FB-70N6 absolute maximum ratings: (1)TBIAS, temperature under bias: -50 to 125℃; (2)TSTG, storage temperature: -65 to 150℃; (3)VIO, input or output voltage: -0.6 to VCC +0.6 V; (4)VCC, supply voltage: -0.6 to 4 V; (5)VID, identification voltage: -0.6 to 13.5 V; (6)VPP, program voltage: -0.6 to 13.5 V.
Features
M29W640FB-70N6 features: (1)Supply voltage, VCC = 2.7V to 3.6V for program, erase, read, VPP =12 V for fast program (optional); (2)Asynchronous random/page read, page width: 4 words; Page Access: 25ns; Random access: 60ns, 70ns; (3)Programming time, 10 μs per byte/word typical; 4 words/8 bytes program; (4)135 memory blocks, 1 boot block and 7 parameter blocks, 8 KBytes each (Top or Bottom Location), 127 Main blocks, 64 KBytes each; (5)Program/Erase controller, embedded byte/word program algorithms.
Diagrams
