(China (Mainland))
Product Summary
The KM416V1204CT-6 is an extended data out CMOS DRAM. Extended data out mode offers high speed random access of memory cells within the same row, so called hyper page mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of the KM416V1204CT-6 have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in L-version. The KM416V1204CT-6 is fabricated using Samsung advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
Parametrics
KM416V1204CT-6 absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN,VOUT: -1.0 to +7.0 V; (2)Voltage on VCC supply relative to VSS VCC: -1.0 to +7.0 V; (3)Storage temperature Tstg: -55 to +150 °C; (4)Power dissipation PD: 1 W; (5)Short circuit output current IOS: 50 mA.
Features
KM416V1204CT-6 features: (1)Extended data out mode operation (Fast page mode with extended data out); (2)2 CAS Byte/Word Read/Write operation; (3)CAS-before-RAS refresh capability; (4)RAS-only and hidden refresh capability; (5)Self-refresh capability (L-ver only); (6)TTL(5V)/LVTTL(3.3V)compatible inputs and outputs; (7)Early write or output enable controlled write; (8)JEDEC standard pinout; (9)Available in plastic SOJ 400mil and TSOP(II)packages; (10)Single +5V±10% power supply (5V product); (11)Single +3.3V±0.3V power supply (3.3V product).
Diagrams
