(China (Mainland))
Product Summary
The k9f5608u0b-ycb0 is a 32Mx8bit or 16Mx16bit NAND flash memory, the k9f5608u0b-ycb0 is 256M bit with spare 8M bit capacity. The k9f5608u0b-ycb0 is offered in 1.8V or 3.3V Vcc. NAND cell of the k9f5608u0b-ycb0 provides the most cost-effective solutIon for the solid state mass storage market. A program operation of the k9f5608u0b-ycb0 can be performed in typical 200μs on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block.
Parametrics
k9f5608u0b-ycb0 absolute maximum ratings: (1) Voltage on any pin relative to VSS VIN/OUT: -0.6 to +4.6V, VCC: -0.6 to +4.6V, VCCQ: -0.6 to +4.6V; (2) Temperature Under Bias TBIAS: -10 to +125°C; (3) Storage Temperature Tstg: -65 to +150°C; (4) Short Circuit Current Ios: 5mA.
Features
k9f5608u0b-ycb0 features: (1) Voltage Supply: 2.7 to 3.6V; (2) Organization: Memory Cell Array (32M + 1024K)bit x 8 bit; (3) Automatic Program and Erase; (4) Page Read Operation; (5) Fast Write Cycle Time; (6) Command/Address/Data Multiplexed I/O Port; (7) Hardware Data Protection; (8) Reliable CMOS Floating-Gate Technology; (9) Command Register Operation; (10) Intelligent Copy-Back; (11) Unique ID for Copyright Protection; (12) 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) .
Diagrams
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 K9F5608U0B-YCB0 |
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Negotiable |
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K9F5608D0C |
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K9F5608D0D |
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Negotiable |
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K9F5608Q0B-DCB0 |
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Negotiable |
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K9F5608Q0B-DIB0 |
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Negotiable |
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K9F5608Q0B-HCB0 |
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Negotiable |
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K9F5608Q0B-HIB0 |
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Negotiable |
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