(China (Mainland))
Product Summary
The K9F1G08U0DSCB0 is a 128M x 8 Bit NAND Flash memory. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed [[[in typical 300μs on the 2112-byte page and an erase operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 50ns (30ns, K9F1G08U0DSCB0) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08U0DSCB0 extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0DSCB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
Parametrics
K9F1G08U0DSCB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN/OUT: -0.6 to + 4.6V; VCC: -0.6 to + 4.6 V; (2)Temperature Under Bias TBIAS: -10 to +125 ℃; (3)Storage Temperature TSTG: -65 to +150 ℃; (4)Short Circuit Current Ios: 5 mA.
Features
K9F1G08U0DSCB0 features: (1)Fast Write Cycle Time: Program time: 300μs(Typ.); Block Erase Time: 2ms(Typ.); (2)Command/Address/Data Multiplexed I/O Port; (3)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (4)Reliable CMOS Floating-Gate Technology; Endurance: 100K Program/Erase Cycles; Data Retention: 10 Years; (5)Command Register Operation; (6)Cache Program Operation for High Performance Program; (7)Intelligent Copy-Back Operation; (8)Unique ID for Copyright Protection.
Diagrams
