(China (Mainland))
Product Summary
The K4S281632K-UC75 is a 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the K4S281632K-UC75 to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4S281632K-UC75 absolute maximum ratings: (1)Voltage on any pin relative to Vss:-1.0V to 4.6V; (2)Voltage on VDD supply relative to Vss:-1.0V to 4.6V; (3)Storage temperature:-55℃ to +150℃; (4)Power dissipation: 1W; (5)Short circuit current: 50mA.
Features
K4S281632K-UC75 features: (1)JEDEC standard 3.3V power supply; (2)JEDEC standard 3.3V power supply; (3)Four banks operation; (4)All inputs are sampled at the positive going edge of the system clock; (5)Burst read single-bit write operation; (6)L(U)DQM (x16) for masking; (7)Auto & self refresh; (8)64ms refresh period (4K Cycle); (9)RoHS compliant; (10)Support Industrial Temp (-40 to 85℃).
Diagrams
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 K4S281632K-UC75 |
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Negotiable |
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K4S280432A |
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K4S280432B |
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K4S280432C |
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Negotiable |
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K4S280432E-TC(L)75 |
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Negotiable |
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K4S280432F |
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Negotiable |
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K4S280432F-TC(L)75 |
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Negotiable |
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