Product Summary

The k2611 is an N channel enhancement mode power field effect transistor. The k2611 is produced using Winsemi properietarym planar stripe, DMOS technology. The k2611 is well suited for high efficiency switch mode power supplies.

Parametrics

k2611 absolute maximum ratings: (1) drain source voltage VDSS: 900V; (2)ID: 11A continuous drain current (@Tc=25°C) , 7A continuous drain current (@Tc=100°C) ; (3) drain current pulsed IDM: 45.6A; (4) gate to source voltage: ± 30V; (5) single pulsed avalance energy: 1000mJ; (6) repetitive avalanche energt: 30mJ; (7) total power dissipation (@Tc=25°C ) : 300W, debrating factor above 25°C: 2.38W/°C; (8) Junction and storage temperature: -55 to 150°C; (9) channel temperature TL: 300°C.

Features

k2611 features: (1) 11A, 900V, RDS (on) (Max1. 10Ω) @VGS=10V; (2) Ultra low gate charge (typical 72nC) ; (3) fast switching capability; (4) 100% avalanche tested; (5) maximum junction temperature range (150°C) .

Diagrams

k2611 test circuit