Product Summary
The IXFT32N50Q is a power MOSFET.
Parametrics
IXFT32N50Q absolute maximum ratings: (1)VDSS TJ = 25°C to 150°C: 500 V; (2)VDGR TJ = 25°C to 150°C; RGS = 1 MΩ: 500 V; (3)VGS Continuous: ±20 V; (4)VGSM Transient: ±30 V; (5)ID25 TC = 25°C: 32 A; (6)IDM TC = 25°C; pulse width limited by TJM: 128 A; (7)IAR TC = 25°C: 32 A; (8)EAR TC = 25°C: 45 mJ; (9)EAS: 1500 mJ; (10)dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω: 5 V/ns; (11)PD TC = 25°C: 416 W; (12)TJ: -55 to + 150 °C; (13)TJM: 150 °C; (14)Tstg: -55 to + 150 °C; (15)TL 1.6 mm (0.063 in)from case for 10 s: 300 °C; (16)Md Mounting torque: 1.13/10 Nm/lb.in.; (17)Weight: TO-247 6 g; TO-268 4 g.
Features
IXFT32N50Q features: (1)IXYS advanced low Qg process; (2)Low gate charge and capacitances: Easier to drive; Faster switching; (3)International standard packages; (4)Low RDS (on); (5)Unclamped Inductive Switching (UIS)rated; (6)Molding epoxies meet UL 94 V-0 flammability classification.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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IXFT32N50Q |
Ixys |
MOSFET 500V 32A |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
IXFT 28N50F |
Other |
Data Sheet |
Negotiable |
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IXFT10N100 |
Ixys |
MOSFET 10 Amps 1000V 1.2 Rds |
Data Sheet |
Negotiable |
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IXFT120N15P |
Ixys |
MOSFET 120 Amps 150V 0.016 Rds |
Data Sheet |
Negotiable |
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IXFT12N100 |
Ixys |
MOSFET 12 Amps 1000V 1.05 Rds |
Data Sheet |
Negotiable |
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IXFT12N100F |
Ixys |
MOSFET |
Data Sheet |
Negotiable |
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IXFT12N100Q |
Ixys |
MOSFET 12 Amps 1000V |
Data Sheet |
Negotiable |
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