(China (Mainland))
Product Summary
The IXFN80N50 is a Power MOSFET. The applications of the device include DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, Temperature and lighting controls.
Parametrics
IXFN80N50 absolute maximum ratings: (1)VDSS: 500 V when TJ= 25 to 150℃; (2)VDGR: 500 V when TJ= 25 to 150℃; RGS = 1 MΩ; (3)VGS: ±20 V when Continuous; (4)VGSM: ±30 V when Transient; (5)ID25: 75 A when TC = 25℃, Chip capability; (6)IAR: 80 A when TC = 25℃; (7)EAR: 64mJ when TC = 25℃; (8)EAS: 6J when TC = 25℃; (9)dv/dt: 5 V/ns when IS ≤IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ≤ 150℃, RG = 2Ω; (10)PD: 700 W when TC = 25℃; (11)TJ: -55 to +150℃; (12)TJM: 150℃; (13)Tstg: -55 to +150℃.
Features
IXFN80N50 features: (1)International standard packages; (2)miniBLOC, with Aluminium nitride isolation; (3)Low RDS (on) HDMOSTM process; (4)Rugged polysilicon gate cell structure; (5)Unclamped Inductive Switching (UIS) rated; (6)Low package inductance; (7)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFN80N50 |
Ixys |
MOSFET 500V 80A |
Data Sheet |
Negotiable |
|
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|
IXFN80N50P |
Ixys |
MOSFET 500V 80A |
Data Sheet |
Negotiable |
|
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|
IXFN80N50Q3 |
Ixys |
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A |
Data Sheet |
Negotiable |
|
||||
 |
IXFN80N50Q2 |
Ixys |
MOSFET 80 Amps 500V 0.06 Rds |
Data Sheet |
Negotiable |
|
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