(China (Mainland))
Product Summary
The IRG4PH30KD is an insulated gate bipolar transistor with ultrafast soft recovery diode.
Parametrics
IRG4PH30KD absolute maximum ratings: (1)VCES, Collector-to-Emitter Voltage: 1200 V; (2)IC @ TC = 25℃, Continuous Collector Current: 20A; (3)IC @ TC = 100℃, Continuous Collector Current: 10A; (4)ICM, Pulsed Collector Current: 40 A; (5)ILM, Clamped Inductive Load Current: 40A; (6)IF @ TC = 100℃, Diode Continuous Forward Current: 10A; (7)IFM, Diode Maximum Forward Current: 40A; (8)tsc, Short Circuit Withstand Time: 10 μs; (9)VGE, Gate-to-Emitter Voltage: ± 20 V; (10)PD @ TC = 25℃, Maximum Power Dissipation: 100W; (11)PD @ TC = 100℃, Maximum Power Dissipation: 42W; (12)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +150℃.
Features
IRG4PH30KD features: (1)High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V, TJ = 125℃, VGE = 15V; (2)Combines low conduction losses with high switching speed; (3)Tighter parameter distribution and higher efficiency than previous generations; (4)IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes.
Diagrams
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 IRG4PH30KD |
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IGBT W/DIODE 1200V 20A TO-247AC |
Data Sheet |
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IRG4PH30KDPBF |
International Rectifier |
IGBT Transistors |
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