Product Summary
The HN29V51211T-50H is a CMOS Flash Memory with AND type multi-level memory cells. The HN29V51211T-50H has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of the HN29V51211T-50H are more than 32,113 (98% of all sector address) and less than 32,768 sectors.
Parametrics
HN29V51211T-50H absolute maximum ratings: (1)VCC voltage VCC: -0.6 to +4.6 V; (2)All input and output voltages Vin, Vout: -0.6 to +4.6 V; (3)Operating temperature range Topr: 0 to +70 °C; (4)Storage temperature range Tstg: -65 to +125 °C; (5)Storage temperature under bias Tbias: -10 to +80 °C; (6)Operating VCC current (Program)ICC3: 20 to 40 mA; (7)Operating VCC current (Erase)ICC4: 20 to 40 mA; (8)Input leakage current ILI: 2 μA Vin = VSS to VCC; (9)Output leakage current ILO: 2 μA Vout = VSS to VCC.
Features
HN29V51211T-50H features: (1)Sector program time: 1.0 ms (typ); (2)System bus free; (3)Address, data latch function; (4)Internal automatic program verify function; (5)Status data polling function; (6)On-board single power supply (VCC): VCC = 2.7 V to 3.6 V; (7)Error correction: more than 3-bit error correction per each sector read; (8)Spare sectors: 1.8% (579 sectors)within usable sectors.
Diagrams
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HN29V51211T-50H |
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