Product Summary

The GM71V18163CT6 is a new generation dynamic RAM organized 4,194,304 words x 4 bit. The GM71V18163CT6 has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V18163CT6 offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address inputs permit the GM71V18163CT6 to be packaged in a standard 300 mil 24(26) pin SOJ, and a standard 300 mil 24(26) pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

Parametrics

GM71V18163CT6 absolute maximum ratings: (1)Ambient Temperature under Bias: 0 ~ 70 ℃; (2)Storage Temperature: -55 ~ 125 ℃; (3)Voltage on any Pin Relative to VSS: -0.5 ~ 4.6 V; (4)Short Circuit Output Current: 50 mA; (5)Power Dissipation: 1.0 W.

Features

GM71V18163CT6 features: (1)1,048,576 Words x 16: Bit Organization; (2)Extended Data Out Mode Capability; (3)Single Power Supply (3.3V +/- 0.3V); (4)Fast Access Time Cycle Time.

Diagrams

GM71V18163CT6 pin connection