(China (Mainland))
Product Summary
The GLT5640L16-8TC is a high-speed 67,108,864-bit synchronous dynamic random-access memory. It is organized as 1,048,576 x 16 x 4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture and clock frequency up to 183MHz. All input and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
Parametrics
GLT5640L16-8TC absolute maximum ratings: (1) Supply Voltage: -0.5V to 4.6V; (2) Supply Voltage for Output: -0.5V to 4.6V; (3) Input Voltage: -0.5V to VDD+0.5V; (4) Output Voltage: -0.5V to VDDQ+0.5V; (5) Short circuit output current: 50mA; (6) Power dissipation: 1W; (7) Operating temperature: 0℃ to 70℃; (8) Storage temperature: -65℃ to 150℃.
Features
GLT5640L16-8TC features: (1)Single 3.3V ((±0.3V) power supply; (2)Fully synchronous operation referenced to clock rising edge; (3)Possible to assert random column access in every cycle; (4)Quad internal banks controlled by BA0 & BA1 (Bank Select); (5)Byte control by LDQM and UDQM; (6)Programmable Wrap sequence (Sequential / Interleave); (7)Programmable burst length (1, 2, 4, 8 and full page); (8)Programmable /CAS latency (2 and 3); (9)Automatic precharge and controlled precharge.
Diagrams
