(China (Mainland))
Product Summary
The fz400r12ke3 is an IGBT module.
Parametrics
fz400r12ke3 absolute maximum ratings: (1) collector-emitter voltage VCES: 1200V (Tvj=25°C) ; (2) DC-collector current, ICnom: 400A (Tc=80°C, Tvj=150°C) ; (3) repetitive peak collector current ICRM: 800A (tp=1ms, Tc=80°C) ; (4) total power dissipation Ptot: 2250W (Tc=25°C, Tvj=150°C) ; (5) gate-emitter peak voltage VGES: ±20V.
Features
fz400r12ke3 features: (1) collector-emitter saturation voltage VCE sat: 200V (Ic=400A, VGE=15V) ; (2) gate thresold voltage VGEth: 5 to 6.5V; (3) gate charge QG: 3.7μC (Ic=16mA, VCE=VGE, Tvj=25°C) ; (4) internal gate resistor RGint: 1.9Ω (Tvj=25°C) ; (5) input capacitance Cies: 28nF (f=1MHz, Tvj=25°C, VCE=25V, VGE=0V) ; (6) gate-emitter leakage current IGES: 400nA (VCE=0V, VGE=20V, Tvj=25°C) .
Diagrams
| Image | Part No | Mfg | Description |  |
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 FZ400R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 400A SINGLE |
Data Sheet |
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FZ400R12KE3B1 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 650A |
Data Sheet |
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FZ400R12KE3S |
Infineon Technologies |
IGBT Transistors 1200V 400A SINGLE |
Data Sheet |
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