(China (Mainland))
Product Summary
The FS75R12KT3 is an IGBT-Module.
Parametrics
FS75R12KT3 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)DC-collector current: 75A; (3)repetitive peak collector current: 150A; (4)total power dissipation: 355W; (5)gate-emitter peak voltage: ± 20V.
Features
FS75R12KT3 features: (1)Collector-emitter saturation voltage: 1.90V; (2)Gate threshold voltage: 5.0V to 6.5V; (3)Gate charge: 0.70μC; (4)Internal gate resistor: 10Ω; (5)Input capacitance: 5.30nF; (6)Reverse transfer capacitance: 0.20nF.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FS75R12KT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 105A |
Data Sheet |
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FS75R12KT3G |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 100A |
Data Sheet |
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