Product Summary

The FS75R12KT3 is an IGBT-Module.

Parametrics

FS75R12KT3 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)DC-collector current: 75A; (3)repetitive peak collector current: 150A; (4)total power dissipation: 355W; (5)gate-emitter peak voltage: ± 20V.

Features

FS75R12KT3 features: (1)Collector-emitter saturation voltage: 1.90V; (2)Gate threshold voltage: 5.0V to 6.5V; (3)Gate charge: 0.70μC; (4)Internal gate resistor: 10Ω; (5)Input capacitance: 5.30nF; (6)Reverse transfer capacitance: 0.20nF.

Diagrams

FS75R12KT3 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FS75R12KT3
FS75R12KT3

Infineon Technologies

IGBT Modules N-CH 1.2KV 105A

Data Sheet

0-8: $60.06
8-10: $57.48
FS75R12KT3G
FS75R12KT3G

Infineon Technologies

IGBT Modules N-CH 1.2KV 100A

Data Sheet

0-8: $65.51