(China (Mainland))
Product Summary
The FDP050 is an N-Channel PowerTrench MOSFET. The applications of the FDP050 include Motor / Body Load Control, ABS Systems, Powertrain Management, Injection Systems, DC-DC converters and Off-line UPS, Distributed Power Architectures and VRMs, Primary Switch for 12V and 24V systems.
Parametrics
FDP050 absolute maximum ratings: (1)VDSS, Drain to Source Voltage: 60 V; (2)VGS, Gate to Source Voltage: ±20 V; (3)ID, Drain Current, Continuous (TC < 135℃, VGS = 10V): 80 A; Continuous (TA = 25℃, VGS = 10V, RθJA = 43℃/W): 18 A; Pulsed Figure: 4 A; (4)EAS, Single Pulse Avalanche Energy: 470 mJ; (5)PD, Power dissipation: 245 W; (6)Derate above 25℃: 1.63 W/℃; (7)TJ, TSTG, Operating and Storage Temperature: -55 to 175℃.
Features
FDP050 features: (1)rDS(ON) = 4.3mΩ(Typ.), VGS = 10V, ID = 80A; (2)Qg(tot) = 61nC (Typ.), VGS = 10V; (3)Low Miller Charge; (4)Low QRR Body Diode; (5)UIS Capability (Single Pulse and Repetitive Pulse); (6)Qualified to AEC Q101.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FDP050AN06A0 |
Fairchild Semiconductor |
MOSFET N-Channel PowerTrench |
Data Sheet |
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FDP050AN06A0_F085 |
Fairchild Semiconductor |
MOSFET N-Chan PowerTrench |
Data Sheet |
Negotiable |
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FDP050AN06A0_Q |
Fairchild Semiconductor |
MOSFET N-Channel PowerTrench |
Data Sheet |
Negotiable |
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