Product Summary
The D1027 is a metal gate RF silicon FET. Application is VHF/UHF communications from 1 MHz to 200 MHz.
Parametrics
D1027 absolute maximum ratings: (1)Power Dissipation: 438W; (2)Drain – Source Breakdown Voltage: 70V; (3)Gate – Source Breakdown Voltage: ±20V; (4)Drain Current: 30A; (5)Storage Temperature: -65 to 150°C; (6)Maximum Operating Junction Temperature: 200°C.
Features
D1027 features: (1)Simplified amplifier design; (2)Suitable for broad band applications; (3)Low crss; (4)Simple bias circuits; (5)Low noise; (6)High gain – 13 dB minimum.
Diagrams
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