(China (Mainland))
Product Summary
The cy7c109bkl-15vc is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion of the cy7c109bkl-15vc is provided by an active LOW Chip Enable (CE1) , an active HIGH Chip Enable (CE2) , an active LOW Output Enable (OE) , and three-sate drivers. Writing to the cy7c109bkl-15vc is accomplished by taking Chip Enable One (CE1) and Write ) inputs LOW and Chip Enable Two (CE2) input high. The cy7c109bkl-15vc is available in a 300-mil-wide SOJ package.
Parametrics
cy7c109bkl-15vc absolute maximum ratings: (1) Storage Temperature: -65 to +150°C; (2) Ambient Temperature with Power Applied: -55 to +125°C; (3) Supply Voltage on VCC to Relative GND: -0.5 to +7V; (4) DC Voltage Applied to Outputs in High Z State: -0.5 to Vcc +0.5V; (5) DC Input Voltage: -0.5 to Vcc +0.5V; (6) Current into Outputs (LOW) : 20mA; (7) Static Discharge Voltage: >2001V (per MIL-STD-883, Method 3015) ; (8) Latch-Up Current: >200 mA.
Features
cy7c109bkl-15vc features: (1) High speed: tAA=12ns; (2) Low active power: 495 mW (max. 12 ns) ; (3) Low CMOS standby power: 55mW; (4) 2.0V Data Retention; (5) Automatic power-down when deselected; (6) TTL-compatible inputs and outputs; (7) Easy memory expansion with CE1, CE2, and OE options.
Diagrams
