(China (Mainland))
Product Summary
The BUP313D is an IGBT With Antiparallel Diode Preliminary data.
Parametrics
BUP313D absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kΩ VCGR: 1200V; (3)Gate-emitter voltage VGE: ±20V; (4)DC collector current IC: 32A at TC = 25 ℃; 20A at TC = 90 ℃; (5)Pulsed collector current, tp = 1 ms ICpuls: 64A at TC = 25 ℃; 40A at TC = 90 ℃; (6)Diode forward current TC = 90 ℃ IF: 18A; (7)Pulsed diode current, tp = 1 ms TC = 25 ℃ IFpuls: 108A; (8)Power dissipation TC = 25 ℃ Ptot: 200W; (9)Chip or operating temperature Tj: -55 to + 150 ℃; (10)Storage temperature Tstg: -55 to + 150℃.
Features
BUP313D features: (1)Low forward voltage drop; (2)High switching speed; (3)Low tail current; (4)Latch-up free; (5)Including fast free-wheel diode.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BUP313D |
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Data Sheet |
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