Product Summary

The BUK417-500AE is a N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The BUK417-500AE is intended for use in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

Parametrics

BUK417-500AE absolute maximum ratings: (1)drain-source voltage:500V; (2)drain-gate voltage:500V; (3)gate-source voltage:30V; (4)drain current: 32A or 20A; (5)drain current(pulse peak value):128A; (6)ancillary source current:5.0A; (7)total power dissipation:310W; (8)storage temperature:150℃; (9)junction temperature:150℃.

Features

BUK417-500AE features: (1)drain-sourece voltage:500V; (2)drain current:32A; (3)total power dissipation:310W; (4)resistance:0.13Ω.

Diagrams

BUK417-500AE circuit diagram

BUK436W-1000B
BUK436W-1000B

Other


Data Sheet

Negotiable 
BUK436W-200A
BUK436W-200A

Other


Data Sheet

Negotiable 
BUK436W-200B
BUK436W-200B

Other


Data Sheet

Negotiable 
BUK436W-800A
BUK436W-800A

Other


Data Sheet

Negotiable 
BUK436W-800B
BUK436W-800B

Other


Data Sheet

Negotiable 
BUK438-1000A
BUK438-1000A

Other


Data Sheet

Negotiable