(China (Mainland))
Product Summary
The BUK417-500AE is a N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The BUK417-500AE is intended for use in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
Parametrics
BUK417-500AE absolute maximum ratings: (1)drain-source voltage:500V; (2)drain-gate voltage:500V; (3)gate-source voltage:30V; (4)drain current: 32A or 20A; (5)drain current(pulse peak value):128A; (6)ancillary source current:5.0A; (7)total power dissipation:310W; (8)storage temperature:150℃; (9)junction temperature:150℃.
Features
BUK417-500AE features: (1)drain-sourece voltage:500V; (2)drain current:32A; (3)total power dissipation:310W; (4)resistance:0.13Ω.
Diagrams
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Negotiable |
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BUK436W-200A |
Other |
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Negotiable |
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BUK436W-200B |
Other |
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Negotiable |
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BUK436W-800A |
Other |
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Data Sheet |
Negotiable |
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BUK436W-800B |
Other |
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Negotiable |
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BUK438-1000A |
Other |
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Data Sheet |
Negotiable |
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