Product Summary

The APT5020BN is a power MOS IV.

Parametrics

APT5020BN absolute maximum ratings: (1)Drain-Source Voltage: 500V; (2)Continuous Drain Current @ TC = 25℃: 28A; (3)Pulsed Drain Current: 112A; (4)Gate-Source Voltage: ±30V; (5)Total Power Dissipation @ TC = 25℃: 360W; (6)Linear Derating Factor: 2.9W/℃; (7)Operating and Storage Junction Temperature Range: -55 to 150W; (8)Lead Temperature: 0.063" from Case for 10 Sec: 300℃.

Features

APT5020BN features: (1)Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V): 250μA; (2)Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125℃):1000μA; (3)Gate-Source Leakage Current (VGS = ±30V, VDS = 0V): ±100nA; (4)Gate Threshold Voltage (VDS = VGS, ID = 1.0mA): 2 to 4V.

Diagrams

APT5020BN dimension